Design and Simulation of a 5.8 GHz Gallium Nitride Broadband Power Amplifier Based on ADS and a Double-pi Matching Network

DOI: https://doi.org/10.62517/jes.202602304

Author(s)

Yinzhe Gao

Affiliation(s)

School of Integrated Circuits, Shandong University, Jinan, Shandong, China *Corresponding author.

Abstract

With the development of wireless communication systems, the 5.8 GHz band has become increasingly valuable for applications such as wireless local area networks (WLANs), drone video transmission, and short-range high-speed communication, placing higher demands on the output power, efficiency, and stability of RF power amplifiers.In this paper, a GaN broadband power amplifier operating in the 5.725–5.85 GHz band is designed and simulated using Advanced Design System software. During the design process, GaN power transistors were selected as the core devices, and circuit optimization was achieved through DC simulation, S-parameter stability analysis, load-pull simulation, double-pi matching network design, and harmonic balance simulation.This paper focuses on metrics such as output power, gain, input return loss, and power added efficiency, with the goal of achieving an output power greater than 40 dBm, a power added efficiency greater than 45%, a gain greater than 10 dB, and an input return loss lower than -10 dB. This design can serve as a reference for the simulation and design of 5.8 GHz GaN power amplifiers.

Keywords

GaN Power Amplifier; ADS Simulation; Load-Pull; Double-pi Matching Network; Power Added Efficiency

References

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